Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper) : Insulating films on semiconductors; INFOS 2009
In: MICROELECTRONIC ENGINEERING 86(7/9):1615-1620; Jg. 86 (2009) 7/9, S. 1615-1620
Konferenz
Zugriff:
Titel: |
Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper) : Insulating films on semiconductors; INFOS 2009
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Autor/in / Beteiligte Person: | Schroeder, T. ; Giussani, A. ; Muessig, H. J. ; Weidner, G. ; Costina, I. ; Wenger, C. ; Lukosius, M. ; Storck, P. ; Zaumseil, P. |
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Quelle: | MICROELECTRONIC ENGINEERING 86(7/9):1615-1620; Jg. 86 (2009) 7/9, S. 1615-1620 |
Veröffentlichung: | 2009 |
Medientyp: | Konferenz |
ISSN: | 0167-9317 (print) |
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