Context Dependence Effects in Si/SiON Based Advanced CMOS Devices : Silicon nitride, silicon dioxide, and emerging dielectrics
In: ECS TRANSACTIONS 35(4):287-302; Jg. 35 (2011) 4, S. 287-302
Konferenz
Zugriff:
Titel: |
Context Dependence Effects in Si/SiON Based Advanced CMOS Devices : Silicon nitride, silicon dioxide, and emerging dielectrics
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Autor/in / Beteiligte Person: | Olubuyide, O.O. |
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Quelle: | ECS TRANSACTIONS 35(4):287-302; Jg. 35 (2011) 4, S. 287-302 |
Veröffentlichung: | 2011 |
Medientyp: | Konferenz |
ISBN: | 978-1-56677-865-7 (print) ; 978-1-60768-215-8 (print) ; 1-56677-865-4 (print) ; 1-60768-215-X (print) |
ISSN: | 1938-5862 (print) |
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