Large boron-interstitial cluster modelling in BF3 plasma implanted silicon : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
In: PHYSICA STATUS SOLIDI C CONFERENCES 11(1):117-120; Jg. 11 (2014) 1, S. 117-120
Konferenz
Zugriff:
Titel: |
Large boron-interstitial cluster modelling in BF3 plasma implanted silicon : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
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Autor/in / Beteiligte Person: | Essa, Z. ; Cristiano, F. ; Spiegel, Y. ; Qiu, Y. ; Boulenc, P. ; Quillec, M. ; Taleb, N. ; Zographos, N. ; Bedel-Pereira, E. ; Mortet, V. |
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Quelle: | PHYSICA STATUS SOLIDI C CONFERENCES 11(1):117-120; Jg. 11 (2014) 1, S. 117-120 |
Veröffentlichung: | 2014 |
Medientyp: | Konferenz |
ISSN: | 1610-1634 (print) |
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