An Extended-Gate Ion-Sensitive Field-Effect Transistor with CMOS Technology-Intrinsic TiN Sensing Layer : 239th ECS meeting with the 18th international meeting on chemical sensors (IMCS)
In: Meeting abstracts 239(4):2301-2302; Jg. 239 (2021) 4, S. 2301-2302
Konferenz
Zugriff:
Titel: |
An Extended-Gate Ion-Sensitive Field-Effect Transistor with CMOS Technology-Intrinsic TiN Sensing Layer : 239th ECS meeting with the 18th international meeting on chemical sensors (IMCS)
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Autor/in / Beteiligte Person: | Teng, Nan-Yuan ; Wu, Yi-Ting ; Lin, Chih-Ting |
Link: | |
Quelle: | Meeting abstracts 239(4):2301-2302; Jg. 239 (2021) 4, S. 2301-2302 |
Veröffentlichung: | 2021 |
Medientyp: | Konferenz |
ISSN: | 0160-4619 (print) |
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