Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology : SiGe, Ge, and related materials: Materials, processing, and devices (10th symposium)
In: ECS transactions 109(4):35-46; Jg. 109 (2022) 4, S. 35-46
Konferenz
Zugriff:
Titel: |
Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology : SiGe, Ge, and related materials: Materials, processing, and devices (10th symposium)
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Autor/in / Beteiligte Person: | Mai, C. ; Marschmeyer, S. ; Peczek, A. ; Kroh, A. ; Jose, J. ; Reiter, S. ; Fischer, I. ; Wenger, C. ; Mai, A. |
Link: | |
Quelle: | ECS transactions 109(4):35-46; Jg. 109 (2022) 4, S. 35-46 |
Veröffentlichung: | 2022 |
Medientyp: | Konferenz |
ISSN: | 1938-5862 (print) |
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