Growth of cubic InxGa1-xN over whole composition by MBE : Gallium Nitride Materials and Devices XVIII
In: Proceedings of SPIE, the International Society for Optical Engineering 12421:124210B-124210B-6; Jg. 12421 (2023) S. 124210B
Konferenz
Zugriff:
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Growth of cubic InxGa1-xN over whole composition by MBE : Gallium Nitride Materials and Devices XVIII
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Autor/in / Beteiligte Person: | Zscherp, M. F. ; Jentsch, S. A. ; Müller, M. J. ; Littmann, M. ; Meier, F. ; Hofmann, D. M. ; As, D. J. ; Chatterjee, S. ; Schörmann, J. |
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Quelle: | Proceedings of SPIE, the International Society for Optical Engineering 12421:124210B-124210B-6; Jg. 12421 (2023) S. 124210B |
Veröffentlichung: | 2023 |
Medientyp: | Konferenz |
ISBN: | 978-1-5106-5947-6 (print) ; 1-5106-5947-1 (print) |
ISSN: | 0277-786X (print) |
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