Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer
In: IEEE JOURNAL OF QUANTUM ELECTRONICS, Jg. 46 (2010), Heft 4, S. 513-517
Online
serialPeriodical
Zugriff:
Titel: |
Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer
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Autor/in / Beteiligte Person: | Jang, C. H. ; Sheu, J. K. ; Tsai, C. M. ; Chang, S. J. ; Lai, W. C. ; Lee, M. L. ; Ko, T. K. ; Shen, C. F. ; Shei, S. C. |
Link: | |
Zeitschrift: | IEEE JOURNAL OF QUANTUM ELECTRONICS, Jg. 46 (2010), Heft 4, S. 513-517 |
Veröffentlichung: | 2010 |
Medientyp: | serialPeriodical |
ISSN: | 0018-9197 (print) |
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