Analysis of anisotropic in-plane strain behavior in condensed Si~1~−~xGe~x fin epitaxial layer using X-ray reciprocal space mapping
In: Japanese journal of applied physics, Jg. 58 (2019), Heft 3, S. 036502-36502
serialPeriodical
Zugriff:
Titel: |
Analysis of anisotropic in-plane strain behavior in condensed Si~1~−~xGe~x fin epitaxial layer using X-ray reciprocal space mapping
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Autor/in / Beteiligte Person: | Jang, Hyunchul ; Kim, Byongju ; Koo, Sangmo ; Choi, Yongjoon ; Shin, Chan-Soo ; Ko, Dae-Hong |
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Zeitschrift: | Japanese journal of applied physics, Jg. 58 (2019), Heft 3, S. 036502-36502 |
Veröffentlichung: | 2019 |
Medientyp: | serialPeriodical |
ISSN: | 0021-4922 (print) |
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