A 23.6-Mb/mm<inline-formula> <tex-math notation='LaTeX'>$^{2}$ </tex-math></inline-formula> SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications
In: IEEE journal of solid-state circuits, Jg. 54 (2019), Heft 1, S. 210-216
Online
serialPeriodical
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Titel: |
A 23.6-Mb/mm<inline-formula> <tex-math notation='LaTeX'>$^{2}$ </tex-math></inline-formula> SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications
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Zeitschrift: | IEEE journal of solid-state circuits, Jg. 54 (2019), Heft 1, S. 210-216 |
Veröffentlichung: | 2019 |
Medientyp: | serialPeriodical |
ISSN: | 0018-9200 (print) |
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