Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism
In: Journal of applied physics, Jg. 121 (2017), Heft 15
Online
serialPeriodical
Zugriff:
Titel: |
Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism
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Autor/in / Beteiligte Person: | Yang, Ming-Han ; Hwu, Jenn-Gwo |
Link: | |
Zeitschrift: | Journal of applied physics, Jg. 121 (2017), Heft 15 |
Veröffentlichung: | 2017 |
Medientyp: | serialPeriodical |
ISSN: | 0021-8979 (print) |
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