Physical properties of high resistivity Si, Si/SiO2 wafers and CMOS diode under 10 MeV electron irradiation
In: AIP conference proceedings, Jg. 2279 (2020)
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Zugriff:
Titel: |
Physical properties of high resistivity Si, Si/SiO2 wafers and CMOS diode under 10 MeV electron irradiation
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Autor/in / Beteiligte Person: | Neaosuphap, Sakdinan ; Prabket, Jirawat ; Chanlek, Narong ; Kobdaj, Chinorat |
Link: | |
Zeitschrift: | AIP conference proceedings, Jg. 2279 (2020) |
Veröffentlichung: | 2020 |
Medientyp: | serialPeriodical |
ISSN: | 0094-243X (print) |
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