Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation
In: IEEE transactions on nuclear science, Jg. 70 (2023), Heft 4, S. 515-522
Online
serialPeriodical
Zugriff:
Titel: |
Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation
|
---|---|
Autor/in / Beteiligte Person: | Jouni, Ali ; Sicre, Mathieu ; Malherbe, Victor ; Mamdy, Bastien ; Thery, Thomas ; Belloir, Jean-Marc ; Soussan, Dimitri ; De Paoli, Serge ; Lorquet, Vincent ; Lalucaa, Valerian ; Virmontois, Cedric ; Gasiot, Gilles ; Goiffon, Vincent |
Link: | |
Zeitschrift: | IEEE transactions on nuclear science, Jg. 70 (2023), Heft 4, S. 515-522 |
Veröffentlichung: | 2023 |
Medientyp: | serialPeriodical |
ISSN: | 0018-9499 (print) |
Sonstiges: |
|