RF p -GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications
In: IEEE electron device letters, Jg. 44 (2023), Heft 9, S. 1412-1415
Online
serialPeriodical
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Titel: |
RF p -GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications
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Autor/in / Beteiligte Person: | Zhou, Junmin ; Guo, Haowen ; Du, Haitao ; Zhang, Yu ; Qu, Haolan ; Huang, Wei ; Zhou, Jianjun ; Xiao, Zhiqiang ; Zou, Xinbo |
Link: | |
Zeitschrift: | IEEE electron device letters, Jg. 44 (2023), Heft 9, S. 1412-1415 |
Veröffentlichung: | 2023 |
Medientyp: | serialPeriodical |
ISSN: | 0741-3106 (print) |
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