A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz
In: International Journal of Microelectronics and Computer Science
Online
serialPeriodical
Zugriff:
In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply.
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A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz
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Autor/in / Beteiligte Person: | Borrego, R. |
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Zeitschrift: | International Journal of Microelectronics and Computer Science |
Medientyp: | serialPeriodical |
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