Effect of annealing on the microwave properties of (Zr, Sn)TiO4 ceramics
In: Refereed Reports: ELECTROCERAMICS VII '00, PortoroŽ, Slovenia, 3-6 September 2000Journal of the European Ceramic Society 21(10-11):1727-1730; Jg. 21 (2001) 10-11, S. 1727-1730
Konferenz
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Zugriff:
(Zr,Sn)TiO4 dielectric ceramics containing La2O3 and NiO as sintering aids were prepared by the conventional solid-state reaction. Ceramics sintered at 1370°C for 20 h exhibit dielectric constants k around 37.1 and a QF value of 41,500 GHz, measured at 4 GHz. After annealing, k remains constant. However, the QF value is strongly affected by the annealing process. At 1300°C, annealing has no effect on the quality factor Q. Annealing at temperatures 1225 and 1200°C induce a 50% decrease of QF values. Intermediate annealing temperatures of 1275 and 1250°C induce a 25% improvement of QF values. These ceramics were investigated by XRD. SEM and EDS. The matrix phase ZST was observed together with three different secondary phases: TiO2ss, La2/3TiO3 and TiNiO3. Appearance and following diffusion of these secondary phases and other impurities to the ceramic surfaces during annealing can explain the QF behaviour.
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Effect of annealing on the microwave properties of (Zr, Sn)TiO4 ceramics
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Autor/in / Beteiligte Person: | HOUIVET, David ; EL FALLAH, Jaafar ; LAMAGNERE, Bernadette ; HAUSSONNE, Jean-Marie |
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Quelle: | Refereed Reports: ELECTROCERAMICS VII '00, PortoroŽ, Slovenia, 3-6 September 2000Journal of the European Ceramic Society 21(10-11):1727-1730; Jg. 21 (2001) 10-11, S. 1727-1730 |
Veröffentlichung: | Oxford: Elsevier, 2001 |
Medientyp: | Konferenz |
Umfang: | print, 5 ref |
ISSN: | 0955-2219 (print) |
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