Comparative study of LNO, LSCO and LSMO as electrode layers for microelectronic capacitors by dynamic SIMS
In: Surface & coatings technology, Jg. 150 (2002), Heft 2-3, S. 119-124
academicJournal
- print, 13 ref
Zugriff:
Chemical solution-deposited multilayer systems of SrTiO3 (STO)/X/Pt/TiO2/SiO2/Si [where X = LaNiO3 (LNO), La0.5Sr0.5CoO3 (LSCO), La0.7Sr0.3MnO3 (LSMO)] were investigated by dynamic secondary-ion mass spectrometry (SIMS). The STO layer is intended to serve as a dielectric layer for a capacitor, the conducting layers X' are a buffer layer intended to eliminate fatigue effects, which usually occur at the Pt/STO interface. Depth profiles of the main components were obtained, revealing intense diffusion processes, which must have occurred during the deposition/crystallisation processes. Furthermore, Al impurities from the substrate, most probably originating from the Pt-sputter process, are preferentially found at the interfaces. Ti is found to diffuse from the (isolating) STO layer into the conductive X' oxide layers, where a region of constant concentration is observable in all three sample systems.
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Comparative study of LNO, LSCO and LSMO as electrode layers for microelectronic capacitors by dynamic SIMS
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Autor/in / Beteiligte Person: | POLLAK, C ; REICHMANN, K ; HUTTER, H |
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Zeitschrift: | Surface & coatings technology, Jg. 150 (2002), Heft 2-3, S. 119-124 |
Veröffentlichung: | Lausanne: Elsevier, 2002 |
Medientyp: | academicJournal |
Umfang: | print, 13 ref |
ISSN: | 0257-8972 (print) |
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