Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source
In: Journal of non-crystalline solids, Jg. 298 (2002), Heft 2-3, S. 131-136
academicJournal
- print, 16 ref
Zugriff:
Boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) films with a low-concentration of hydrogen-dilution were grown by a mercury-sensitized photo-chemical vapor deposition method using silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) as a carbon source. From the Raman and FTIR spectrum measurements, the p-nc-SiC:H film is composed of nanosize crystal silicon embedded in a hydrogenated amorphous silicon-carbide matrix. A dark conductivity as high as 1.7 x 10-1 S/cm, with an optical bandgap is 2.0 eV, and a crystal volume fraction of 50%, were obtained. We tested these films as window material for amorphous silicon solar cells, obtaining an initial conversion efficiency of 10.4% without using any back reflectors.
Titel: |
Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source
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Autor/in / Beteiligte Person: | SEUNG YEOP, MYONG ; HYUNG KEW, LEE ; YOON, Euisik ; KOENG SU, LIM |
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Zeitschrift: | Journal of non-crystalline solids, Jg. 298 (2002), Heft 2-3, S. 131-136 |
Veröffentlichung: | Amsterdam: Elsevier, 2002 |
Medientyp: | academicJournal |
Umfang: | print, 16 ref |
ISSN: | 0022-3093 (print) |
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