Electron microscopy analyses of microstructures in ELO-GaN
In: ICCG-13/ICVGE-11: Proceedings of the Thirteenth International Conference on Crystal Growth in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July - 4 August 2001. Part 2Journal of crystal growth 237-39:1047-1054; Jg. 237-39 (2002) S. 1047-1054
Konferenz
- print, 21 ref 2
Zugriff:
Several topical results of electron microscope analyses for microstructures in epitaxial lateral overgrown (ELO)-GaN arc reported. (1) Dislocations lying on (0 0 0 1), or horizontal dislocations (HDs), are generated in ELO-GaN layers overlying on a mask of a-SiO2. The HDs have a shape of loop or semi-loop, and the morphology suggests that the HDs are generated through a multiplication mechanism with the assistance of internal stress. (2) On GaInN GaN, a pit is formed at the end of a threading dislocation (TD) of any Burgers vector, a, c or a+c. The density and distribution of TDs in ELO-GaN can be estimated by observing these growth pits after a subsequent deposition of a thin GaInN layer on the ELO-GaN. The critical thickness for the formation of pits has a dependency upon the concentration of In in GaInN and the Burgers vector. (3) It was demonstrated that electron backscattering diffraction pattern (EBSP) analyses can estimate a two-dimensional distribution of c-axis orientation of ELO-GaN for a wide area with an accuracy of 0.2 or better.
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Electron microscopy analyses of microstructures in ELO-GaN
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Autor/in / Beteiligte Person: | KUWANO, Noriyuki ; HORIBUCHI, Kayo ; KAGAWA, Koji ; NISHIMOTO, Shigefumi ; SUEYOSHI, Manabu |
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Quelle: | ICCG-13/ICVGE-11: Proceedings of the Thirteenth International Conference on Crystal Growth in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July - 4 August 2001. Part 2Journal of crystal growth 237-39:1047-1054; Jg. 237-39 (2002) S. 1047-1054 |
Veröffentlichung: | Amsterdam: Elsevier, 2002 |
Medientyp: | Konferenz |
Umfang: | print, 21 ref 2 |
ISSN: | 0022-0248 (print) |
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