High-density V-groove InGaAs/AlGaAs quantum wires on submicron gratings by constant growth technique

TSURUMACHI, Noriaki ; SON, Chang-Sik ; et al.

In: ICCG-13/ICVGE-11: Proceedings of the Thirteenth International Conference on Crystal Growth in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July - 4 August 2001. Part 2Journal of crystal growth 237-39:1486-1490; Jg. 237-39 (2002) S. 1486-1490

Konferenz - print, 7 ref 2

Wie komme ich dran?

High-density InGaAs/AlGaAs quantum wire (QWR) structures with a period of 430 nm were successfully grown by using constant metalorganic chemical vapor deposition growth technique in which submicron gratings were preserved even after an epitaxial growth of 1 μm thickness, The quantum confinement effect of the InGaAs/AlGaAs QWRs is strong due to the large band offset and enhanced migration of surface adsorbed III-group element species compared with the GaAs/AlGaAs QWRs. The photoluminescence signal of the InGaAs/AlGaAs QWRs was observed in the temperature range from 10 to 300 K with a relatively narrow full width at half maximum of <40 meV.

Titel:	High-density V-groove InGaAs/AlGaAs quantum wires on submicron gratings by constant growth technique
Autor/in / Beteiligte Person:	TSURUMACHI, Noriaki ; SON, Chang-Sik ; TAE GEUN, KIM ; OGURA, Mutsuo
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	ICCG-13/ICVGE-11: Proceedings of the Thirteenth International Conference on Crystal Growth in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July - 4 August 2001. Part 2Journal of crystal growth 237-39:1486-1490; Jg. 237-39 (2002) S. 1486-1490
Veröffentlichung:	Amsterdam: Elsevier, 2002
Medientyp:	Konferenz
Umfang:	print, 7 ref 2
ISSN:	0022-0248 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Geology Géologie Metallurgy, welding Métallurgie, soudage Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure, proprietes mecaniques et thermiques Condensed matter: structure, mechanical and thermal properties Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Structures de basse dimensionnalité (superréseaux, puits quantiques, multicouches): structure et propriétés non électroniques Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Semiconducteurs iii-v Iii-v semiconductors Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Sciences appliquees Applied sciences Electronique Electronics Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Electronique moléculaire, nanoélectronique Molecular electronics, nanoelectronics III-V semiconductors Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) Arséniure Arsenides Composé minéral Inorganic compounds Aluminium arséniure Aluminium arsenides Croissance cristalline en phase vapeur Crystal growth from vapors Etude expérimentale Experimental study Fil quantique Quantum wires Gallium arséniure Gallium arsenides Haute résolution High-resolution methods Hétéroépitaxie Heteroepitaxy Heteroepitaxia Indium arséniure Indium arsenides Laser réaction répartie Distributed feedback lasers Microscopie électronique balayage Scanning electron microscopy Microscopie électronique transmission Transmission electron microscopy Méthode MOCVD MOCVD Semiconducteur III-V Al As Ga AlGaAs As Ga In InGaAs
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Photonics 1-1-4 Umezono, Tsukuba, Ibaraki 170-6027, Japan ; CREST Japan Science and Technology Corporation (JST), Japan ; NEDO, 3-1-1 Higashi-Ikebukuro, Tokyo 170-6027, Japan Rights: Copyright 2002 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics ; Physics and materials science ; Physics of condensed state: electronic structure, electrical, magnetic and optical properties ; Physics of condensed state: structure, mechanical and thermal properties

Klicken Sie ein Format an und speichern Sie dann die Daten oder geben Sie eine Empfänger-Adresse ein und lassen Sie sich per Email zusenden.

BibTeX Citavi, JabRef, u.a.
(Literaturverwaltung)

PDF kein Volltext!
(Merkzettel, Notizen)

RIS Endnote, Citavi u.a.
(Literaturverwaltung)

MODS
(XML zur Weiterverarbeitung)

oder

Wählen Sie das für Sie passende Zitationsformat und kopieren Sie es dann in die Zwischenablage, lassen es sich per Mail zusenden oder speichern es als PDF-Datei.

Gewünschter Zitations-Stil:

oder

Bitte prüfen Sie, ob die Zitation formal korrekt ist, bevor Sie sie in einer Arbeit verwenden. Benutzen Sie gegebenenfalls den "Exportieren"-Dialog, wenn Sie ein Literaturverwaltungsprogramm verwenden und die Zitat-Angaben selbst formatieren wollen.