94-GHz MMIC CPW low-noise amplifier on InP
In: Gigahertz devices and systems (Boston MA, 20 September 1999)SPIE proceedings series :32-37
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Zugriff:
High performances have been achieved at W-band with a 2-stage 0.1 μm gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T-gate profile, we use silicon nitride SixNy technology, which leads to naturally passivated devices. For a drain-to-source current Ids=350mA/mm the devices demonstrate a maximum intrinsic transconductance Gm of 1600mS/mm and an intrinsic current gain cutoff frequency Fc=220GHz. The extrinsic current gain cut-off frequency Ft is 175GHz. The LNA shows a minimum noise figure of 3.3dB with an associated gain of 11.5dB at 94GHz.
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94-GHz MMIC CPW low-noise amplifier on InP
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Autor/in / Beteiligte Person: | DAMBRINE, G ; HOEL, V ; BORET, S ; GRIMBERT, B ; BOLLAERT, S ; WALLART, X ; LEPILLIET, S ; CAPPY, A |
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Quelle: | Gigahertz devices and systems (Boston MA, 20 September 1999)SPIE proceedings series :32-37 |
Veröffentlichung: | Bellingham WA: SPIE, 1999 |
Medientyp: | Konferenz |
Umfang: | print, 4 ref |
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