Structure study of thin RPECVD CdxZn1-xS films
In: EUROCVD 13: Thirteenth European Conference on Chemical Vapor Deposition, Glyfada, Athens, Greece, August 26-31, 2001Journal de physique. IV 83:Pr3.979-Pr3.985
Konferenz
- print, 28 ref
Zugriff:
Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C2H5)2)2.C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The CdxZn1-xS film is substitution solid solution with hexagonal texture structure.
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Structure study of thin RPECVD CdxZn1-xS films
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Autor/in / Beteiligte Person: | FAINER, N. I ; KOSINOVA, M. L ; RUMYANTSEV, Yu. M ; MAXIMOVSKI, E. A ; TERAUCHI, M ; SHIBATA, K ; SATOH, F ; TANAKA, M ; SYSOEVA, N. P ; KUZNETSOV, F. A |
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Quelle: | EUROCVD 13: Thirteenth European Conference on Chemical Vapor Deposition, Glyfada, Athens, Greece, August 26-31, 2001Journal de physique. IV 83:Pr3.979-Pr3.985 |
Veröffentlichung: | Les Ulis: EDP sciences, 2001 |
Medientyp: | Konferenz |
Umfang: | print, 28 ref |
ISSN: | 1155-4339 (print) |
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