Status of Cat-CVD (Hot-Wire CVD) research in Europe
In: Proceedings of the First International Conference on Cat-CVD (Hot-Wire CVD) Process, Kanazawa, Japan, November 14-17, 2000Thin solid films 395(1-2):17-24; Jg. 395 (2001) 1-2, S. 17-24
Konferenz
- print, 48 ref
Zugriff:
In Europe, an increasing number of groups are commencing and expanding research on the Hot Wire CVD process, and on the unique materials and optoelectronic devices that can be obtained with this process. There are at least seven laboratories that are intensively studying and utilizing the Hot Wire CVD process, while other groups who do not presently have such deposition facilities, have developed an interest in the characterization of the unique properties of Hot Wire deposited materials. Even now, the number of groups that are actively engaged in processing of the thin films is still growing. Silicon thin films with amorphous, microcrystalline, and polycrystalline character have been made. Doped layers, both p- and n-type, and dielectric layers with device-quality properties are available. There are numerous applications, of which solar cells and thin film transistors are the most intensively studied. This paper describes the ongoing investigations and results obtained in Europe. It is not meant to be an exhaustive review, but rather a snapshot of the current highlights.
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Status of Cat-CVD (Hot-Wire CVD) research in Europe
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Autor/in / Beteiligte Person: | SCHROPP, R. E. I |
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Quelle: | Proceedings of the First International Conference on Cat-CVD (Hot-Wire CVD) Process, Kanazawa, Japan, November 14-17, 2000Thin solid films 395(1-2):17-24; Jg. 395 (2001) 1-2, S. 17-24 |
Veröffentlichung: | Lausanne: Elsevier Science, 2001 |
Medientyp: | Konferenz |
Umfang: | print, 48 ref |
ISSN: | 0040-6090 (print) |
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