Charge-trapping defects in Cat-CVD silicon nitride films
In: Proceedings of the First International Conference on Cat-CVD (Hot-Wire CVD) Process, Kanazawa, Japan, November 14-17, 2000Thin solid films 395(1-2):266-269; Jg. 395 (2001) 1-2, S. 266-269
Konferenz
- print, 8 ref
Zugriff:
We show that Cat-CVD silicon nitride films contain more than 1019 cm-3 nitrogen-bonded Si dangling bonds, similarly to the case for conventional CVD films. However, the charge-trapping behavior of the Cat-CVD films is found to be quite different, in spite of the same origin for the dominant defects. The difference is ascribed to a non-uniform distribution of defects that is strongly depleted near the surface in Cat-CVD films.
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Charge-trapping defects in Cat-CVD silicon nitride films
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Autor/in / Beteiligte Person: | UMEDA, T ; MOCHIZUKI, Y ; MIYOSHI, Y ; NASHIMOTO, Y |
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Quelle: | Proceedings of the First International Conference on Cat-CVD (Hot-Wire CVD) Process, Kanazawa, Japan, November 14-17, 2000Thin solid films 395(1-2):266-269; Jg. 395 (2001) 1-2, S. 266-269 |
Veröffentlichung: | Lausanne: Elsevier Science, 2001 |
Medientyp: | Konferenz |
Umfang: | print, 8 ref |
ISSN: | 0040-6090 (print) |
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