Improved pulse carrier MI effect by flash anneal of amorphous wires and FM wireless CMOS IC torque sensor
In: Selected Papers from the Eighth Joint Magnetism and Magnetic Materials-International Magnetics Conference (MMM-Intermag), San Antonio, TX, January 7-11, 2001IEEE transactions on magnetics 37(4):2038-2041
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- print, 5 ref 1
Zugriff:
A figure of merit (FOM) for the magneto-impedance (MI) effect is defined by the product of the MI ratio and the cut-off frequency for ac field detection as ( |∂Z/∂Hex| /Zo) fcutoff. The FOM for almost zero-magnetostrictive amorphous wire of 30 μm diameter was about improved 2.5 times by twisting and flash annealing using a pulse current of 80 mA, 1 second. A sensitive, quick response, and low power consumption wireless FM type MI sensor is constituted using the high FOM amorphous wire head combined with all CMOS IC sensor circuit. The wireless MI sensor is successfully applied to a torque sensor fixed on an automobile power steering steel.
| Titel: |
Improved pulse carrier MI effect by flash anneal of amorphous wires and FM wireless CMOS IC torque sensor
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| Autor/in / Beteiligte Person: | CHANG MEI, CAI ; MOHRI, Kaneo ; HONKURA, Yoshinobu ; YAMAMOTO, Michiharu |
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| Quelle: | Selected Papers from the Eighth Joint Magnetism and Magnetic Materials-International Magnetics Conference (MMM-Intermag), San Antonio, TX, January 7-11, 2001IEEE transactions on magnetics 37(4):2038-2041 |
| Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2001 |
| Medientyp: | Konferenz |
| Umfang: | print, 5 ref 1 |
| ISSN: | 0018-9464 (print) |
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