The X-ray single crystal structure of [Me2In(acac)]2 and its use as a single-source precursor for the deposition of indium oxide thin films
In: Journal of material chemistry, Jg. 11 (2001), Heft 9, S. 2346-2349
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Zugriff:
Crystalline dimethyl(pentane-2,4-dionato)indium(III), [Me2In(acac)]2, has been prepared by the reaction of dimethylindium methoxide and pentane-2,4-dione in toluene. An X-ray structure determination shows that in the solid state, the complex is dimeric. [Me2In(acac)]2 has been used as a single-source precursor for the deposition of cubic In2O3 thin films by low pressure metal organic chemical vapour deposition (LP-MOCVD) at temperatures ranging from 350 to 450°C, on borosilicate glass, Si(100) and GaAs(111) substrates. All the as-deposited indium oxide films are single phase, cubic-In2O3.
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The X-ray single crystal structure of [Me2In(acac)]2 and its use as a single-source precursor for the deposition of indium oxide thin films
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Autor/in / Beteiligte Person: | PARK, Jin-Ho ; HORLEY, Graeme A ; O'BRIEN, Paul ; JONES, Anthony C ; MOTEVALLI, Majid |
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Zeitschrift: | Journal of material chemistry, Jg. 11 (2001), Heft 9, S. 2346-2349 |
Veröffentlichung: | Cambridge: Royal Society of Chemistry, 2001 |
Medientyp: | academicJournal |
Umfang: | print, 20 ref |
ISSN: | 0959-9428 (print) |
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