Effects of atomic hydrogen in gas phase on a-Si:H and poly-Si growth by catalytic CVD

UMEMOTO, Hironobu ; NOZAKI, Yoshitaka ; et al.

In: Proceedings of the 19th international conference on amorphous and microcrystalline semiconductors - science and technology (ICAMS 19), Nice, France, August 27-31, 2001. Part AJournal of non-crystalline solids 299302:9-13; Jg. 299302 (2002) S. 9-13

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The effects of H atoms on the hydrogenated amorphous silicon and poly-Si film-growth in catalytic CVD processes were examined. The following results were obtained: (1) The H atom concentration in the gas phase can be as high as 1014 cm-3. This density is more than one order of magnitude higher than those in conventional plasma-enhanced CVD processes. (2) When SiH4 is introduced, the H atom density decreases sharply. This decrease is mainly caused by the loss processes on chamber walls, but gas phase reactions with SiH4 to produce SiH3 are also important. SiH3 thus produced should be one of the dominant deposition precursors for Si film-growth. (3) Atomic H etches not only amorphous but also crystalline Si, including single-crystalline one. (4) The main etching product is SiH4, but Si2H6 is also produced. Si2H6 derived from previously deposited Si compounds deteriorates the film properties. However, this deterioration can be avoided by regular chamber cleaning using H atoms.

Titel:	Effects of atomic hydrogen in gas phase on a-Si:H and poly-Si growth by catalytic CVD
Autor/in / Beteiligte Person:	UMEMOTO, Hironobu ; NOZAKI, Yoshitaka ; IZUMI, Akira ; MASUDA, Atsushi ; MATSUMURA, Hideki ; KITAZOE, Makiko ; HORII, Katsuhiko ; OHARA, Kentaro ; MORITA, Daisuke ; UCHIDA, Kenji ; ISHIBASHI, Yoriko ; KOMODA, Manabu ; KAMESAKI, Koji
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	Proceedings of the 19th international conference on amorphous and microcrystalline semiconductors - science and technology (ICAMS 19), Nice, France, August 27-31, 2001. Part AJournal of non-crystalline solids 299302:9-13; Jg. 299302 (2002) S. 9-13
Veröffentlichung:	Amsterdam: Elsevier, 2002
Medientyp:	Konferenz
Umfang:	print, 17 ref a
ISSN:	0022-3093 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Chemical industry parachemical industry Industrie chimique et parachimique Metallurgy, welding Métallurgie, soudage Condensed state physics Physique de l'état condensé Sciences exactes et technologie Exact sciences and technology Physique Physics Physique des gaz, des plasmas et des decharges electriques Physics of gases, plasmas and electric discharges Physique des plasmas et décharges électriques Physics of plasmas and electric discharges Applications des plasmas Plasma applications Etat condense: structure, proprietes mecaniques et thermiques Condensed matter: structure, mechanical and thermal properties Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Surfaces solides et interfaces solide-solide Solid surfaces and solid-solid interfaces Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) Non métal Nonmetals Catalyse Catalysis Croissance cristalline en phase vapeur Crystal growth from vapors Dépôt chimique phase vapeur CVD Etat amorphe Amorphous state Etude expérimentale Experimental study Film Films Hydrogène Atome Hydrogen Atoms Matériau amorphe hydrogéné Amorphous hydrogenated material Polycristal Polycrystals Préparation chimique Chemical preparation Semiconducteur Semiconductor materials Silicium Silicon Si a-Si:H
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Nomi, Ishikawa 923-1292, Japan Rights: Copyright 2002 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science ; Physics of condensed state: structure, mechanical and thermal properties ; Physics of gases, plasmas and electric discharges

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