Recent progress of Cat-CVD research in Japan: bridging between the first and second Cat-CVD conferences
In: Proceedings of the Second International Conference on Cat-CVD (Hot Wire CVD) Process, Denver, Colorado, USA, September 10-13, 2002Thin solid films 430(1-2):7-14; Jg. 430 (2003) 1-2, S. 7-14
Konferenz
- print, 13 ref
Zugriff:
We review the recent progress of Cat-CVD research in Japan since the 1st Cat-CVD conference in Kanazawa in 2000. Some groups, including ours, succeeded in realizing large-area deposition of amorphous silicon (a-Si) of approximately 1 m size, and thin film transistors (TFTs) with a mobility over several 10s of cm2 V-1 s-1 are fabricated using Cat-CVD polycrystalline silicon (poly-Si) films. Extensive studies of in situ cleaning methods revealed that a high rate of chamber cleaning is possible in Cat-CVD systems. Solar cell research is now carried out within the New Energy and Industrial Technology Development Organization (NEDO) project, and the study of Cat-CVD Si3N4 films prepared at lower than 100°C is now a Japan Science and Technology Corporation (JST) project to use them as coatings on organic devices. The feasibility of Cat-CVD for various applications has been widely demonstrated, along with further understanding of the fundamental mechanism of the Cat-CVD process.
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Recent progress of Cat-CVD research in Japan: bridging between the first and second Cat-CVD conferences
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Autor/in / Beteiligte Person: | MATSUMURA, Hideki ; UMEMOTO, Hironobu ; IZUMI, Akira ; MASUDA, Atsushi |
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Quelle: | Proceedings of the Second International Conference on Cat-CVD (Hot Wire CVD) Process, Denver, Colorado, USA, September 10-13, 2002Thin solid films 430(1-2):7-14; Jg. 430 (2003) 1-2, S. 7-14 |
Veröffentlichung: | Lausanne: Elsevier Science, 2003 |
Medientyp: | Konferenz |
Umfang: | print, 13 ref |
ISSN: | 0040-6090 (print) |
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