A new step in high-frequency EPR of defects in semiconductors
In: Proceedings of the 22nd International Conference on Defects in Semiconductors, ICDS-22, Aarhus, Denmark, 28 July-1 August 2003Physica. B, Condensed matter 340-42:1147-1150
Konferenz
- print, 9 ref
Zugriff:
An electron paramagnetic resonance (EPR) spectrometer is described which allows for continuous-wave and pulsed EPR experiments at 275GHz (wavelength 1.1 mm). The related magnetic field of 9.9T for g∼2 is supplied by a superconducting solenoid. The microwave bridge employs quasi-optical as well as conventional waveguide components. A cylindrical, single-mode cavity provides a high filling factor and a high sensitivity for EPR detection. Even with the available microwave power of 1 mW incident at the cavity a high microwave magnetic field B1 is obtained of about 0.1 mT which permits π/2-pulses as short as 100 ns. The performance of the spectrometer is illustrated with the help of spectra taken with several samples.
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A new step in high-frequency EPR of defects in semiconductors
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Autor/in / Beteiligte Person: | BLOK, H ; DISSELHORST, J. A. J. M ; ORLINSKII, S. B ; SCHMIDT, J ; BARANOV, P. G |
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Quelle: | Proceedings of the 22nd International Conference on Defects in Semiconductors, ICDS-22, Aarhus, Denmark, 28 July-1 August 2003Physica. B, Condensed matter 340-42:1147-1150 |
Veröffentlichung: | Amsterdam: Elsevier, 2003 |
Medientyp: | Konferenz |
Umfang: | print, 9 ref |
ISSN: | 0921-4526 (print) |
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