Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films
In: Solar energy materials and solar cells, Jg. 81 (2004), Heft 2, S. 197-203
academicJournal
- print, 23 ref
Zugriff:
Al2O3-coated TiO2. porous films were used to fabricate solid-state dye-sensitized solar cells using Cul as hole conductor. Investigation with transient photovoltage measurements showed that the Al2O3 interlayer slowed down the interfacial recombination of electrons in TiO2 with holes in Cul by forming a potential barrier at the TiO2/CuI interface. As a consequence, the cell made from Al2O3-coated TiO2 film showed superior cell performance than the cell made from TiO2 film only, especially under relative high intensity of simulated sunlight.
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Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films
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Autor/in / Beteiligte Person: | ZHANG, Xin-Tong ; LIU, Hong-Wu ; TAGUCHI, Taketo ; MENG, Qing-Bo ; SATO, Osamu ; FUJISHIMA, Akira |
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Zeitschrift: | Solar energy materials and solar cells, Jg. 81 (2004), Heft 2, S. 197-203 |
Veröffentlichung: | Amsterdam: Elsevier, 2004 |
Medientyp: | academicJournal |
Umfang: | print, 23 ref |
ISSN: | 0927-0248 (print) |
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