Characterization of optical and electrical quality of Mg-doped InxGa1-xN grown by MOCVD

LEE, Sung-Nam ; SAKONG, Tan ; et al.

In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, ColoradoJournal of crystal growth 261(2-3):249-252; Jg. 261 (2004) 2-3, S. 249-252

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We investigated the optical and electrical quality of Mg-doped InxGa1-xN (0≤x≤0.045) grown by metalorganic chemical vapor deposition with different In and Mg contents. The band edge emission of p-InxGa1-xN layer depended on the Mg incorporation. The emission intensity of InGaN band edge peak was drastically reduced with increasing Mg incorporation, indicating that the concentration of nonradiative recombination centers increased with Mg doping concentration in InGaN layer. Mg-related emission of p-InxGa1-xN was changed from the shallow acceptor level to deep acceptor level as Mg concentration increased. Additionally, photoluminescence spectra showed that the band to acceptor emission energy E(e-, A0) decreased with increasing In composition under the same Mg concentration of 2 × 1019/cm3. The activation energy of Mg obtained from PL spectra is reduced from 170 to 123 meV with increasing In content. Although the intensity of InGaN band edge emission and the donor-acceptor pair emission drastically decreased with increasing Mg concentration, the hole concentration increased up to 2.5 × 1018/cm3 with Mg concentration for p-In0.045Ga0.955N.

Titel:	Characterization of optical and electrical quality of Mg-doped InxGa1-xN grown by MOCVD
Autor/in / Beteiligte Person:	LEE, Sung-Nam ; SAKONG, Tan ; LEE, Wonseok ; PAEK, Hosun ; SON, Joongkon ; YOON, Euijoon ; NAM, Okhyun ; PARK, Y
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, ColoradoJournal of crystal growth 261(2-3):249-252; Jg. 261 (2004) 2-3, S. 249-252
Veröffentlichung:	Amsterdam: Elsevier, 2004
Medientyp:	Konferenz
Umfang:	print, 14 ref
ISSN:	0022-0248 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Geology Géologie Metallurgy, welding Métallurgie, soudage Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure, proprietes mecaniques et thermiques Condensed matter: structure, mechanical and thermal properties Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Structure et morphologie de couches minces Thin film structure and morphology Défauts et impuretés: dopage, implantation, distribution, concentration, etc Defects and impurities: doping, implantation, distribution, concentration, etc Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Semiconducteurs iii-v Iii-v semiconductors III-V semiconductors Composé minéral Inorganic compounds Addition magnésium Magnesium additions Composé ternaire Ternary compounds Couche mince Thin films Couche épitaxique Epitaxial layers Croissance cristalline en phase vapeur Crystal growth from vapors Dopage Doping Dépôt chimique phase vapeur CVD Effet composition Composition effect Efecto composición Etude expérimentale Experimental study Gallium nitrure Gallium nitrides Indium nitrure Indium nitrides Interaction donneur accepteur Donor acceptor interaction Interacción dador aceptor Méthode MOCVD MOCVD Recombinaison non radiative Non radiative recombination Recombinación no radiativa Semiconducteur III-V Ga In N InxGa1-xN 68.55.L Al. Doping 71.55 73.50.J 78.55.C A3. Metalorganic chemical vapor deposition Bl. Nitrides
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Photonics Lab, Samsung Advanced Institute of Technology, P.O. Box III, Suwon 440-600, Korea, Republic of ; Compound Semiconductor Epitaxy Laboratory, School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea, Republic of Rights: Copyright 2004 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics of condensed state: electronic structure, electrical, magnetic and optical properties ; Physics of condensed state: structure, mechanical and thermal properties

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