Effect of initial process conditions on the structural properties of AlN films

PADUANO, Q. S ; WEYBURNE, D. W ; et al.

In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, ColoradoJournal of crystal growth 261(2-3):259-265; Jg. 261 (2004) 2-3, S. 259-265

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A two-step pressure process was recently developed for depositing AlN layers on sapphire substrates by MOCVD. Together with optimum substrate nitridation, the process resulted in AlN layers that had FWHM values of ∼ 350 and ∼ 550 arcsec for the (0002) and (1012) rocking curves, respectively. While the films show excellent X-ray FWHM values, they often have poor morphology as well as small inversion domains spread throughout the film surface. A systematic study was initiated to understand the effect of substrate nitridation and the initial process conditions on the surface morphology and the structural properties. Using atomic force microscopy, transmission electron microscopy, and X-ray diffraction, it was found that the nitridation conditions as well as the initial deposition conditions result in a mixed polarity surface coverage of the substrate. It is possible to force the growth of predominately Al- or N-polarity AlN layers by choosing different initial growth conditions.

Titel:	Effect of initial process conditions on the structural properties of AlN films
Autor/in / Beteiligte Person:	PADUANO, Q. S ; WEYBURNE, D. W ; JASINSKI, J ; LILIENTAL-WEBER, Z
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, ColoradoJournal of crystal growth 261(2-3):259-265; Jg. 261 (2004) 2-3, S. 259-265
Veröffentlichung:	Amsterdam: Elsevier, 2004
Medientyp:	Konferenz
Umfang:	print, 10 ref
ISSN:	0022-0248 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Geology Géologie Metallurgy, welding Métallurgie, soudage Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure, proprietes mecaniques et thermiques Condensed matter: structure, mechanical and thermal properties Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Structure et morphologie de couches minces Thin film structure and morphology Structure et morphologie; épaisseur Structure and morphology; thickness Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) Composé minéral Inorganic compounds Aluminium nitrure Aluminium nitrides Composé binaire Binary compounds Couche mince Thin films Croissance cristalline en phase vapeur Crystal growth from vapors Diffraction RX XRD Dépôt chimique phase vapeur CVD Etude expérimentale Experimental study Microscopie force atomique Atomic force microscopy Microscopie électronique transmission Transmission electron microscopy Morphologie Morphology Méthode MOCVD MOCVD Nitruration Nitridation Semiconducteur III-V III-V semiconductors Al N AlN 68.55.-a A1. Atomic force microscopy 81.15.Gh Al. Crystal morphology Al. High-resolution X-ray diffraction B1. Nitrides
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Air Forte Research Laboratory, 80 Scott Dr. Hanscom AFB, MA 01731, United States ; Lawrence Berkeley National Laboratory, One Cyclotron Rd., Berkeley, CA 94720, United States Rights: Copyright 2004 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science ; Physics of condensed state: structure, mechanical and thermal properties

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