Fabrication of a superconducting MEM shunt switch for RF applications
In: ASC-2002: Superconductors in the Marketplace, Houston, TX, USA, August 4-9, 2002 (Part I of III)IEEE transactions on applied superconductivity 13(2):700-703; Jg. 13 (2003) 2, S. 700-703
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Zugriff:
We have developed a fabrication process for a superconducting MicroElectroMechanical (MEM) shunt switch. The design of the switch has been optimized using Sonnet simulations. The switch consists of a YBa2Cu3O7 Coplanar Waveguide (CPW) transmission line with a gold membrane bridge anchored at the ground planes and suspended above an area of the center conductor covered with BaTiO3. Under an applied electric field this membrane bridge actuates downwards and shunts the RF signal to ground. The membrane returns to its original shape when the electric field is removed. In the up position the device exhibits an s21 insertion loss of less than 0.25 dB from dc through 900 MHz (most of which is due to radiated loss). In the down position the s21 loss in the same frequency range is greater than 30 dB.
| Titel: |
Fabrication of a superconducting MEM shunt switch for RF applications
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| Autor/in / Beteiligte Person: | HIJAZI, Yazan S ; HANNA, Drayton ; FAIRWEATHER, Dane ; VLASOV, Yuri A ; LARKINS, Grover L ; JR |
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| Quelle: | ASC-2002: Superconductors in the Marketplace, Houston, TX, USA, August 4-9, 2002 (Part I of III)IEEE transactions on applied superconductivity 13(2):700-703; Jg. 13 (2003) 2, S. 700-703 |
| Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2003 |
| Medientyp: | Konferenz |
| Umfang: | print, 14 ref 1 |
| ISSN: | 1051-8223 (print) |
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