Dielectric properties of highly (1 0 0) oriented (Pb0.5, Sr0.5)TiO3 thin films grown on LaNiO3 electrodes

KIM, Kyoung-Tae ; KIM, Chang-Il

In: Proceedings of the 30th International Conference on Metallurgical Coatings and Thin Films, San Diego, California, April 28-May 2, 2003Thin solid films 447-48:651-655; Jg. 447-48 (2004) S. 651-655

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Pb0.5,Sr0.5TiO3 (PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates, showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability and figure of merit (FOM). The dielectric constant, tunability and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the inplane oriented polar axis depending on the substrate that was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002 and 60.1%, respectively.

Titel:	Dielectric properties of highly (1 0 0) oriented (Pb0.5, Sr0.5)TiO3 thin films grown on LaNiO3 electrodes
Autor/in / Beteiligte Person:	KIM, Kyoung-Tae ; KIM, Chang-Il
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	Proceedings of the 30th International Conference on Metallurgical Coatings and Thin Films, San Diego, California, April 28-May 2, 2003Thin solid films 447-48:651-655; Jg. 447-48 (2004) S. 651-655
Veröffentlichung:	Lausanne: Elsevier Science, 2004
Medientyp:	Konferenz
Umfang:	print, 13 ref
ISSN:	0040-6090 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Electronics Electronique Metallurgy, welding Métallurgie, soudage Condensed state physics Physique de l'état condensé Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Propriétés et matériaux diélectriques, piézoélectriques et ferroélectriques Dielectrics, piezoelectrics, and ferroelectrics and their properties Propriétés diélectriques des solides et des liquides Dielectric properties of solids and liquids Permittivité (fonction diélectrique) Permittivity (dielectric function) Couches minces diélectriques Dielectric thin films Matériaux diélectriques, piézoélectriques, ferroélectriques et antiferroélectriques Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Niobates, titanates, tantalates, céramiques pzt, etc Niobates, titanates, tantalates, pzt ceramics, etc Composé minéral Inorganic compounds Métal transition composé Transition element compounds Composé quaternaire Quaternary compounds Constante diélectrique Permittivity Couche mince Thin films Croissance cristalline en solution Crystal growth from solutions Diffraction RX XRD Etude expérimentale Experimental study Facteur mérite Figure of merit Factor mérito Matériau diélectrique Dielectric materials Matériau électrode Electrode material Material electrodo Microscopie force atomique Atomic force microscopy Orientation préférentielle Preferred orientation Orientación preferencial Perte diélectrique Dielectric losses Plomb titanate Lead titanates Procédé sol gel Sol-gel process Strontium titanate Strontium titanates (Pb0,5,Sr0,5)TiO3 O Pb Sr Ti Substrat LaNiO3 LaNiO3 PST Sol-gel Tunability dielectric properties
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: School of Electrical and Electronic Engineering, Chungang University, 221, Huksuk-Dong, Dongjak-Gu, Seoul 156-756, Korea, Republic of Rights: Copyright 2004 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics of condensed state: electronic structure, electrical, magnetic and optical properties

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