Large-area Cd-free CIGS solar modules with In2S3buffer layer deposited by ALCVD
In: Proceedings of Symposium D on Thin Film and Nano-Structured Materials for Photovoltaics, of the E-MRS 2003 Spring Conference, Strasbourg, France, June 10-13, 2003Thin solid films 451-52:562-566; Jg. 451-52 (2004) S. 562-566
Konferenz
- print, 11 ref
Zugriff:
The development of Cd-free buffer layers by vacuum process for Cu(In,Ga)Se2 (CIGS) solar modules becomes even more interesting regarding environmental aspects and the implementation in industrial production. This work presents the latest results of CIGS modules with indium sulfide (In2S3) as buffer layer deposited by the atomic layer chemical vapour deposition technique. A module efficiency close to 13% was realised on the area of 30x30 cm2 (η=12.9%, VOC=27,8 V, FF=72.6%, ISC=0.457 A, aperture area: 714 cm2 and 42 cells). Diffusion processes at the buffer layer interfaces, dependent on deposition temperature and post annealing, have been investigated by X-ray photoelectron spectroscopy, secondary ion mass spectrometry and sputtered neutral mass spectrometry analysis. Diffusion of Cu and Na into the buffer layer and intermixing of S and Se at the In2S3/CIGS interface have been detected.
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Large-area Cd-free CIGS solar modules with In2S3buffer layer deposited by ALCVD
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Autor/in / Beteiligte Person: | SPIERING, S ; EICKE, A ; HARISKOS, D ; POWALLA, M ; NAGHAVI, N ; LINCOT, D |
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Quelle: | Proceedings of Symposium D on Thin Film and Nano-Structured Materials for Photovoltaics, of the E-MRS 2003 Spring Conference, Strasbourg, France, June 10-13, 2003Thin solid films 451-52:562-566; Jg. 451-52 (2004) S. 562-566 |
Veröffentlichung: | Lausanne: Elsevier Science, 2004 |
Medientyp: | Konferenz |
Umfang: | print, 11 ref |
ISSN: | 0040-6090 (print) |
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