Dual-metal gate CMOS with HfO2 gate dielectric
In: Electron devices (San Francisco CA, 8-11 December 2002, technical digest) :433-436
Konferenz
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Zugriff:
We report for the first time on a novel dual-metal gate CMOS integration on HfO2 gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising preliminary TDDB data was obtained from dual-metal gate MOSFETs, while still delivering much improved gate leakage (104 - 105 X better than SiO2).
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Dual-metal gate CMOS with HfO2 gate dielectric
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Autor/in / Beteiligte Person: | SAMAVEDAM, S. B ; LA, L. B ; TSENG, H. H ; TOBIN, P. J ; GILMER, D. C ; HOBBS, C ; TAYLOR, W. J ; GRANT, J. M ; HEGDE, R. I ; MOGAB, J ; THOMAS, C ; ABRAMOWITZ, P ; SMITH, J ; MOOSA, M ; CONNER, J ; JIANG, J ; ARUNACHALAM, V ; SADD, M ; NGUYEN, B.-Y ; WHITE, B ; DAKSHINA-MURTHY, S ; LUCKOWSKI, E ; SCHAEFFER, J ; ZAVALA, M ; MARTIN, R ; DHANDAPANI, V ; TRIYOSO, D |
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Quelle: | Electron devices (San Francisco CA, 8-11 December 2002, technical digest) :433-436 |
Veröffentlichung: | Piscataway NJ: IEEE, 2002 |
Medientyp: | Konferenz |
Umfang: | print, 8 ref |
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