Fabrication concept for a CMOS-compatible electrostatically driven surface MEMS switch for RF applications
In: Proceedings of the 29th Conference on Micro and Nano Engineering, September 22-25, 2003, Cambridge, United KingdomMicroelectronic engineering 73-74:468-473; Jg. 73-74 (2004) S. 468-473
Konferenz
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Zugriff:
This paper presents the concept for a completely CMOS-compatible integrated surface RF MEMS switch using the electrostatic actuating principle. Since the CMOS process with 14 lithography and 140 process steps is much more complicated than the process for the MEMS switch, the CMOS process was only slightly modified. The major change to the standard-CMOS process is the use of a highly resistive substrate of at least 1000 Ωcm. This is very important for RF applications to get low loss. The results of an electrical simulation show only negligible difference in the electrical behaviour of the CMOS circuit at a very high control-voltage of the MEMS switch of up to 100 V.
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Fabrication concept for a CMOS-compatible electrostatically driven surface MEMS switch for RF applications
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Autor/in / Beteiligte Person: | HARMS, K. U ; HORSTMANN, J. T |
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Quelle: | Proceedings of the 29th Conference on Micro and Nano Engineering, September 22-25, 2003, Cambridge, United KingdomMicroelectronic engineering 73-74:468-473; Jg. 73-74 (2004) S. 468-473 |
Veröffentlichung: | Amsterdam: Elsevier Science, 2004 |
Medientyp: | Konferenz |
Umfang: | print, 8 ref |
ISSN: | 0167-9317 (print) |
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