LPE growth and characterisation of GaInAsSb and GaALAsSb quaternary layers on (100) GaSb substrates

PISKORSKI, M ; PIOTROWSKA, A ; et al.

In: Proceedings of the 8th European Vacuum Congress Berlin 2003, 23-26 June 2003, featuring the 8th European Vacuum Conference and 2nd Annual Conference of the German Vacuum SocietyThin solid films 459(1-2):2-6; Jg. 459 (2004) 1-2, S. 2-6

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LPE growth of quaternary Ga1-xAlxAsxSb1-y and Ga1-xInxAsySb1-y compounds on (100) GaSb substrates has been investigated for growth temperatures To = 590-594°C and various amount of supersaturation. Epilayers were characterised by means of XRD, TEM, AFM, EPXMA and SIMS. It has been found that LPE growth at To∼593°C produces good quality single Ga1-xAlxAsxSb1-y layers unless the Al content in the melt does not exceed x1Al=0.02 giving perfectly matched Ga1-xAlxAsySb1-y epilayers with Al content in the solid up to x=0.03. Also, smooth and lattice matched Ga1-xInxAsxSb1-y layers for indium atomic fraction in liquid up to x1In = 0.40 have been grown. For higher In content in the melt quality of layers drops drastically because corresponding composition of such layers are situated near miscibility gap. Our approach to fabrication epilayers with high value of x relies on the use of an additional inter-layer GaAlAsSb, lattice-matched to GaSb, inserted between GaSb and high x index epitaxial layer. With such a procedure we were able to grow smooth and homogeneous Ga1-xAlxAsySb1-y epilayers with Al content in solid x=0.62 and Ga1-xInxAsySb1-y layers with In content of 0.24.

Titel:	LPE growth and characterisation of GaInAsSb and GaALAsSb quaternary layers on (100) GaSb substrates
Autor/in / Beteiligte Person:	PISKORSKI, M ; PIOTROWSKA, A ; PIOTROWSKI, T. T ; GOLASZEWSKA, K ; PAPIS, E ; KATCKI, J ; RATAJCZAK, J ; BARCZ, A ; WAWRO, A
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	Proceedings of the 8th European Vacuum Congress Berlin 2003, 23-26 June 2003, featuring the 8th European Vacuum Conference and 2nd Annual Conference of the German Vacuum SocietyThin solid films 459(1-2):2-6; Jg. 459 (2004) 1-2, S. 2-6
Veröffentlichung:	Lausanne: Elsevier Science, 2004
Medientyp:	Konferenz
Umfang:	print, 6 ref
ISSN:	0040-6090 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Electronics Electronique Metallurgy, welding Métallurgie, soudage Condensed state physics Physique de l'état condensé Sciences exactes et technologie Exact sciences and technology Physique Physics Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Epitaxie en phase liquide; dépôt en phase liquide (phases fondues, solutions et couches superficielles sur des liquides) Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) Composé minéral Inorganic compounds Aluminium antimoniure Aluminium antimonides Arsenic Antimoniure Arsenic Antimonides Composition chimique Chemical composition Composé quaternaire Quaternary compounds Couche épitaxique Epitaxial layers Croissance cristalline Crystal growth Diffraction RX XRD Epitaxie phase liquide LPE Etude expérimentale Experimental study Gallium antimoniure Gallium antimonides Indium antimoniure Indium antimonides Microscopie force atomique Atomic force microscopy Microscopie électronique transmission Transmission electron microscopy Miscibilité Miscibility Méthode phase liquide Growth from liquid Método fase líquida Rugosité Roughness Semiconducteur III-V III-V semiconductors Spectre SIMS Secondary ion mass spectra Al As Ga Sb As Ga In Sb Ga1-xAlxAsySb1-y Ga1-xInxAsySb1-y Substrat GaSb 71.20.Nt 73.21.Ac 81.15.Lm 85.60.Bt GaSb GaAlAsSb GalnAsSb Liquid phase epitaxy
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland ; Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland Rights: Copyright 2004 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science

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