Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies
In: Materials for Advanced Metallization, MAM 2004. Proceedings of the European Workshop on Materials for Advanced Metallization 2004, Brussels, Belgium, March 7-10, 2004Microelectronic engineering 76(1-4):349-353
Konferenz
- print, 6 ref
Zugriff:
In this study, we investigated material issues that impact the applicability of Ni silicide gates to complementary-metal-oxide-semiconductor (CMOS) technologies, including the effect of dopants on the kinetics of the silicidation reaction, and the thermal stability of NiSi gates. We confirmed also that the work function of NiSi can be tuned by implanting B and As dopants, which segregate to the silicide/oxide interface.
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Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies
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Autor/in / Beteiligte Person: | PAWLAK, M. A ; KITTL, J. A ; CHAMIRIAN, O ; VELOSO, A ; LAUWERS, A ; SCHRAM, T ; MAEX, K ; VANTOMME, A |
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Quelle: | Materials for Advanced Metallization, MAM 2004. Proceedings of the European Workshop on Materials for Advanced Metallization 2004, Brussels, Belgium, March 7-10, 2004Microelectronic engineering 76(1-4):349-353 |
Veröffentlichung: | Amsterdam: Elsevier Science, 2004 |
Medientyp: | Konferenz |
Umfang: | print, 6 ref |
ISSN: | 0167-9317 (print) |
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