A new approach to the modeling of oxide breakdown on CMOS circuits
In: Reliability of electron devices, failure physics and analysisMicroelectronics and reliability 44(9-11):1519-1522; Jg. 44 (2004) 9-11, S. 1519-1522
Konferenz
- print, 7 ref
Zugriff:
The influence of the oxide breakdown (BD) hardness and location on the performance of several CMOS circuits has been simulated. A simple MOSFET transistor model which takes into account the oxide BD has been used to do the analysis. The results show that the hardness of the BD could play an important role in determining the correct performance of the circuit and under certain conditions the circuits can still be functional.
Titel: |
A new approach to the modeling of oxide breakdown on CMOS circuits
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Autor/in / Beteiligte Person: | FERNANDEZ, R ; RODRIGUEZ, R ; NAFRIA, M ; AYMERICH, X |
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Quelle: | Reliability of electron devices, failure physics and analysisMicroelectronics and reliability 44(9-11):1519-1522; Jg. 44 (2004) 9-11, S. 1519-1522 |
Veröffentlichung: | Oxford: Elsevier, 2004 |
Medientyp: | Konferenz |
Umfang: | print, 7 ref |
ISSN: | 0026-2714 (print) |
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