A large area CMOS monolithic active pixel sensor for extreme ultra violet spectroscopy and imaging
In: Sensors and camera systems for scientific, industrial, and digital photography applications V (San Jose CA, 19-21 January 2004)SPIE proceedings series :175-185
Konferenz
- print, 3 ref
Zugriff:
We describe our programme to develop science-grade CMOS active pixel sensors for future space science missions, and in particular an extreme ultra-violet spectrograph for solar physics studies on the ESA Solar Orbiter. Our goal is the development of a large format 4k x 4k pixel CMOS sensor with useful sensitivity in the extreme ultra-violet (EUV) for solar physics spectroscopy and imaging. Our route to EUV sensitivity relies primarily in adapting the back-thinning and rear-illumination techniques first developed for CCD sensors; however we are also exploring the alternative approach of using a front-etch to expose the CMOS photodiodes. We have successfully back-thinned several 525 x 525 prototype CMOS sensors and proved that the devices survived the process both structurally and functionally. We have also been successful in removing the oxide from the front side of a small array of pixels, using focused ion beam etching. Preliminary results from these pixels show they are sensitive in the Ultra Violet. We have also designed a working large format 4k x 3k prototype on a 0.25 μm CMOS imager process.
Titel: |
A large area CMOS monolithic active pixel sensor for extreme ultra violet spectroscopy and imaging
|
---|---|
Autor/in / Beteiligte Person: | PRYDDERCH, Mark ; WALTHAM, Nick ; MORRISSEY, Quentin ; FRENCH, Marcus ; TURCHETTA, Renato ; POOL, Peter |
Link: | |
Quelle: | Sensors and camera systems for scientific, industrial, and digital photography applications V (San Jose CA, 19-21 January 2004)SPIE proceedings series :175-185 |
Veröffentlichung: | Bellingham WA: SPIE, 2004 |
Medientyp: | Konferenz |
Umfang: | print, 3 ref |
Schlagwort: |
|
Sonstiges: |
|