Domain wall confinement with thin film edges
In: Selected papers from the 7th Perpendicular Magnetic Recording Conference (PMRC 2004)Journal of magnetism and magnetic materials 287:392-396; Jg. 287 (2005) S. 392-396
Konferenz
- print, 8 ref
Zugriff:
Magnetization distribution has been calculated for nanocontacts consisting of two films contacted at their edges by means of a micromagnetic framework using the Laudau-Lifshitz-Gilbert formula. Two types of junctions, crossing edges (X-type) and overlapped corner (C-type) of films, are considered. In the X-type configuration, the domain wall between two films having head-to-head or tail-to-tail magnetization direction is confined when the film thickness is lowered to 4 nm. If the small-size bridge is introduced to the junction area, the wall confinement is slightly enhanced. On the other hand, for the C-type junction the domain wall width decreases with increasing film thickness. These configurations can be potential candidates for the ballistic magnetoresistance sensor which can be manufactured using thin films.
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Domain wall confinement with thin film edges
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Autor/in / Beteiligte Person: | NAWATE, Masahiko ; HONDA, Shigeo ; TANAKA, Hiroshi |
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Quelle: | Selected papers from the 7th Perpendicular Magnetic Recording Conference (PMRC 2004)Journal of magnetism and magnetic materials 287:392-396; Jg. 287 (2005) S. 392-396 |
Veröffentlichung: | Amsterdam: Elsevier Science, 2005 |
Medientyp: | Konferenz |
Umfang: | print, 8 ref |
ISSN: | 0304-8853 (print) |
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