Performance of nitrided Hf-silicate high-K gate dielectrics
In: Advanced short-time thermal processing for Si-based CMOS devices (Paris, 27 April - 2 May 2003)Proceedings - Electrochemical Society :451-457
Konferenz
- print, 7 ref
Zugriff:
The nitrided Hf silicates (HfSiON) prepared by a MOCVD technique for gate dielectrics were characterized in terms of thermal stability and electrical properties. These materials were thermally stable with poly-Si gate upto 1025 °C and easily etched in dilute HF solutions as compared to HtO2 or Hf silicates (HfSiOx). Nitrogen incorporation in Hf silicates induced a negative shift of Vfb. Poly gate NMOS transistors with HfSiON of 21 A Inv Tox showed leakage current reduction by two orders of magnitude and mobility exceeding 80 % of conventional SiO2 based gate dielectrics. These results indicate HfSiON is a promising high-k gate dielectric material for advanced CMOS devices.
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Performance of nitrided Hf-silicate high-K gate dielectrics
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| Autor/in / Beteiligte Person: | JEON, Joong ; QI, XIANG ; ARASNIA, Farzad ; ZHANG, John ; GOO, Jung-Suk ; HALLIYAL, Arvind ; KIM, Hyeon S ; CLARK-PHELPS, Bob ; HUICAI, ZHONG ; OGLE, Bob |
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| Quelle: | Advanced short-time thermal processing for Si-based CMOS devices (Paris, 27 April - 2 May 2003)Proceedings - Electrochemical Society :451-457 |
| Veröffentlichung: | Pennington NJ: Electrochemical Society, 2003 |
| Medientyp: | Konferenz |
| Umfang: | print, 7 ref |
| ISSN: | 0161-6374 (print) |
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