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Epitaxially grown, relaxed Si1xGex layers with x≤0.1 were grown on a Si (100) substrate by means of reduced pressure chemical vapor deposition at a temperature of 750 or 800°C. The analysis carried out on the grown layers revealed a very high material quality indicated by the low density of dislocations (105 cm-2) and the high diffusion length which was deduced from the measurements of electron beam induced current (EBIC) performed on the as-grown layers. Transmission electron microscopy (TEM) measurements showed that the threading dislocation segments do not extend inside the layer but are rather confined to the Si/SiGe interface, which results in a low density of dislocations in the material. The processed solar cells made from these SiGe layers showed a higher infrared response than those made of a corresponding Si grown and processed under similar conditions. No degradation of the solar cell performance caused by the dislocations in the SiGe layers has been observed.

Titel:	High quality, relaxed SiGe epitaxial layers for solar cell application
Autor/in / Beteiligte Person:	SAID, K ; POORTMANS, J ; CAYMAX, M ; LOO, R ; DAAMI, A ; BREMOND, G ; KRUGER, O ; KITTLER, M
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	E-MRS Spring Conference, Symposium E: Thin Film Materials for Large Area ElectronicsThin solid films 337(1-2):85-89; Jg. 337 (1999) 1-2, S. 85-89
Veröffentlichung:	Lausanne: Elsevier Science, 1999
Medientyp:	Konferenz
Umfang:	print, 12 ref
ISSN:	0040-6090 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Electronics Electronique Metallurgy, welding Métallurgie, soudage Condensed state physics Physique de l'état condensé Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure, proprietes mecaniques et thermiques Condensed matter: structure, mechanical and thermal properties Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Structure et morphologie de couches minces Thin film structure and morphology Défauts et impuretés: dopage, implantation, distribution, concentration, etc Defects and impurities: doping, implantation, distribution, concentration, etc Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Sciences appliquees Applied sciences Energie Energy Energie naturelle Natural energy Energie solaire Solar energy Conversion photovoltaïque Photovoltaic conversion Cellules solaires. Cellules photoélectrochimiques Solar cells. Photoelectrochemical cells Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) Non métal Nonmetals Alliage binaire Binary alloys Cellule solaire Solar cells Composition chimique Chemical composition Couche épaisse Thick films Couche épitaxique Epitaxial layers Courant induit Induced current Corriente inducida Densité dislocation Dislocation density Dislocation interfaciale Misfit dislocations Dépôt chimique phase vapeur CVD Etude expérimentale Experimental study Faisceau électronique Electron beam Haz electrónico Germanium alliage Germanium alloys Interface solide solide Solid-solid interfaces Matériau semiconducteur Semiconductor materials Pression réduite Subatmospheric pressure Presión reducida Relaxation Silicium alliage Silicon alloys Solution solide Solid solutions TEM Ge Si Si1-xGex
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Interuniversity Micro-Electronics Centre (IMEC), Kapeldreef 75, 3001 Leuven, Belgium ; INSA de Lyon (UMR 5511), 20 Avenue A. Einstein, 69621 Villeurbanne, France ; Institute for Semiconductor Physics, Walter-Korsing Strasse 2, 15230 Frankfurt (Oder), Germany Rights: Copyright 1999 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Energy ; Physics and materials science ; Physics of condensed state: structure, mechanical and thermal properties

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High quality, relaxed SiGe epitaxial layers for solar cell application