Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors!
In: Journal of material chemistry, Jg. 15 (2005), Heft 19, S. 1896-1902
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academicJournal
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Zugriff:
Thin films of ZrO2 and HfO2 have been deposited by liquid injection MOCVD using the new alkoxide precursors [Zr(OBut)2(dmop)2] (1) and [Hf(OBut)2dmop)2] (2) [dmop = 2-(4,4-dimethyloxazolinyl)-propanolate]. The crystal structures of 1 and 2 have been determined, and they are shown to be six-coordinate monomeric complexes. They are volatile, and are significantly less reactive to air and moisture than existing Zr and Hf alkoxide precursors such as [Zr(OBut)4] and [Hf(OBut)4]. The ZrO2 and HfO2 thin films were deposited over substrate temperatures ranging from 350-550 C. Analysis by X-ray diffraction shows that the films were deposited in the thermodynamically stable α- or monoclinic phase, and Auger electron spectroscopy shows that the ZrO2 and HfO2 films are non-stoichiometric and that carbon (1.9-8 at%) was present in the oxide films.
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Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors!
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Autor/in / Beteiligte Person: | YIM FUN, LOO ; O'KANE, Ruairi ; JONES, Anthony C ; ASPINALL, Helen C ; POTTER, Richard J ; CHALKER, Paul R ; BICKLEY, Jamie F ; TAYLOR, Stephen ; SMITH, Lesley M |
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Zeitschrift: | Journal of material chemistry, Jg. 15 (2005), Heft 19, S. 1896-1902 |
Veröffentlichung: | Cambridge: Royal Society of Chemistry, 2005 |
Medientyp: | academicJournal |
Umfang: | print, 38 ref |
ISSN: | 0959-9428 (print) |
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