Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells
In: Proceedings of Symposium O on Thin Film Chalcogenide Photovoltaic Materials, EMRS 2004 Conference, Strasbourg, France, 24-28 May, 2004Thin solid films 480-81:142-146; Jg. 480-81 (2005) S. 142-146
Konferenz
- print, 20 ref
Zugriff:
CuI has been synthesized at room temperature on Cu-tape/n-CuInS2 by using the SILAR technique (successive ionic layer adsorption and reaction). The influence of wet chemical iodine treatment on the Cul has been investigated in more detail. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), elastic recoil detection analysis (ERDA) and surface photovoltage (SPV) techniques. The Cul films contain the γ-phase of the Zinkblende structure. The crystallites are preferentially oriented in the (111) direction. After wet chemical iodine treatment, the fibrous surface morphology changed to a more dense Cul film with larger crystallites. Oxides could not be detected on the Cul surface. The density of surface states of CIS decreased after the Cul deposition. The importance of the wet chemical iodine treatment for the performance of Cu-tape/n-CuInS2/p-CuI solar cells has been demonstrated.
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Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells
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Autor/in / Beteiligte Person: | SANKAPAL, B. R ; ENNAOUI, A ; GUMINSKAYA, T ; DITTRICH, Th ; BOHNE, W ; ROHRICH, J ; STRUB, E ; LUX-STEINER, M. Ch |
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Quelle: | Proceedings of Symposium O on Thin Film Chalcogenide Photovoltaic Materials, EMRS 2004 Conference, Strasbourg, France, 24-28 May, 2004Thin solid films 480-81:142-146; Jg. 480-81 (2005) S. 142-146 |
Veröffentlichung: | Lausanne: Elsevier Science, 2005 |
Medientyp: | Konferenz |
Umfang: | print, 20 ref |
ISSN: | 0040-6090 (print) |
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