Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

IWATA, K ; SAKEMI, T ; et al.

In: Proceedings of Symposium O on Thin Film Chalcogenide Photovoltaic Materials, EMRS 2004 Conference, Strasbourg, France, 24-28 May, 2004Thin solid films 480-81:199-203; Jg. 480-81 (2005) S. 199-203

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Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm2/Vsec) was observed and the lowest resistivity (2.0×10-4 fl cm) film was obtained from large size grown ZnO TCO of 200x200 mm at low growth temperature of 200 °C with high growth rate of 24 μm/h.

Titel:	Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)
Autor/in / Beteiligte Person:	IWATA, K ; SAKEMI, T ; ISHIZUKA, S ; NIKI, S ; YAMADA, A ; FONS, P ; AWAI, K ; YAMAMOTO, T ; SHIRAKATA, S ; MATSUBARA, K ; TAMPO, H ; SAKURAI, K
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	Proceedings of Symposium O on Thin Film Chalcogenide Photovoltaic Materials, EMRS 2004 Conference, Strasbourg, France, 24-28 May, 2004Thin solid films 480-81:199-203; Jg. 480-81 (2005) S. 199-203
Veröffentlichung:	Lausanne: Elsevier Science, 2005
Medientyp:	Konferenz
Umfang:	print, 14 ref
ISSN:	0040-6090 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Electronics Electronique Metallurgy, welding Métallurgie, soudage Condensed state physics Physique de l'état condensé Sciences exactes et technologie Exact sciences and technology Physique Physics Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Dépôt assisté par faisceaux électroniques et ioniques; placage ionique Ion and electron beam-assisted deposition; ion plating Sciences appliquees Applied sciences Energie Energy Energie naturelle Natural energy Energie solaire Solar energy Conversion photovoltaïque Photovoltaic conversion Cellules solaires. Cellules photoélectrochimiques Solar cells. Photoelectrochemical cells Photoelectric conversion: solar cells and arrays Composé minéral Inorganic compound Compuesto inorgánico Métal transition composé Transition element compounds Addition gallium Gallium addition Adición galio Cellule solaire Solar cell Célula solar Composé binaire Binary compound Compuesto binario Conductivité électrique Electrical conductivity Conductividad eléctrica Couche mince Thin film Capa fina Croissance cristalline en phase vapeur Crystal growth from vapors Densité porteur charge Charge carrier density Concentración portador carga Dopage Doping Epaisseur Thickness Espesor Etude expérimentale Experimental study Estudio experimental Matériau transparent Transparent material Material transparente Matériau électrode Electrode material Material electrodo Mobilité porteur charge Charge carrier mobility Movilidad portador carga Placage ionique Ion plating Enchapado iónico Taux croissance Growth rate Tasa crecimiento Traitement par plasma Plasma assisted processing Zinc oxyde Zinc oxide Zinc óxido O Zn Substrat verre ZnO 61.50.Nw 61.72.-y 61.72.Vv 67.57.Hi 72.80.Ey 73.61.Ga ZnO High growth rate II-VI Large size Transparent conductive oxide
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan ; Research and Development Center, Sumitomo Heavy Industries, Ltd., 5-2 Soubiraki-cyo, Niihama, Ehime 792-8588, Japan ; Sumijyu Technical Center Co., Ltd., 5-2 Soubiraki-cyo, Niihama, Ehime 792-8588, Japan ; Department of Electronic and Photonic System Engineering, Kochi University of Technology, Tosayamada, Kochi 782-8502, Japan ; Department of Electric and Electronic Engineering, Faculty of Engineering, Ehime University, 3-ban, Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan Rights: Copyright 2005 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Energy ; Physics and materials science

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