Surface transfer doping of diamond by fullerene

STROBEL, Paul ; RIEDEL, Marc ; et al.

In: Proceedings of Diamond 2004, the 15th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides & Silicon CarbideDiamond and related materials 14(3-7):451-458; Jg. 14 (2005) 3-7, S. 451-458

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Fifteen years after Landstrass and Ravi [1] [I.M. Landstrass, K.V. Ravi, App. Phys. Lett, 55 (1989) 975] reported a hydrogen induced surface conductivity of diamond, it has now been established that the phenomenon is based on a sub-surface hole accumulation layer. A quantitative model for the origin of this layer has been proposed by our group earlier and is based on the charge exchange between the diamond surface and solvated ions in a water layer that forms spontaneously on all surfaces in air. The process relies on the particularly low ionization energy of the hydrogenated diamond surface [2] [F. Maier, M. Riedel, B. Mantel, J. Ristein, and L. Ley, Phys. Rev. Lett. 85 (2000) 3472]. Here, we report on fullerenes (C60) and fluorinated fullerenes (C60F48) as alternative adsorbate systems. They induce surface conductivity on a level comparable (C60) or even higher (C60F48) than that observed under atmospheric conditions. Whereas in the case of C60 efficient doping requires the formation of the van-der Waals solid on top of the surface of diamond, C60F48 acts as surface acceptor even as isolated molecule. In both cases, the doping efficiency can be modeled by considering the electrochemical equilibrium between the diamond and the adsorbate layer.

Titel:	Surface transfer doping of diamond by fullerene
Autor/in / Beteiligte Person:	STROBEL, Paul ; RIEDEL, Marc ; RISTEIN, Jürgen ; LEY, Lothar ; BOLTALINA, Olga
Link:	E-Journal im Bestand der UB Hagen? View record from PASCAL Archive
Quelle:	Proceedings of Diamond 2004, the 15th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides & Silicon CarbideDiamond and related materials 14(3-7):451-458; Jg. 14 (2005) 3-7, S. 451-458
Veröffentlichung:	Amsterdam: Elsevier, 2005
Medientyp:	Konferenz
Umfang:	print, 20 ref
ISSN:	0925-9635 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure, proprietes mecaniques et thermiques Condensed matter: structure, mechanical and thermal properties Structure des liquides et des solides; cristallographie Structure of solids and liquids; crystallography Défauts et impuretés dans les cristaux; microstructure Defects and impurities in crystals; microstructure Dopage et implantation d'impuretés dans d'autres matériaux Doping and impurity implantation in other materials Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Conductivité de surface et phénomènes de porteurs en surface Surface conductivity and carrier phenomena Composé minéral Inorganic compounds Centre accepteur Acceptor center Centro aceptor Conductivité superficielle Surface conductivity Couche mince Thin films Croissance cristalline en phase vapeur Crystal growth from vapors Diamant Diamonds Dopage Doping Energie activation Activation energy Epitaxie phase vapeur VPE Etude expérimentale Experimental study Hyperfréquence Microwave radiation Hétérojonction Heterojunctions Spectre photoélectron RX X-ray photoelectron spectra Structure bande Band structure Transfert électron Electron transfer C Substrat diamant Diamond film Surface electronic properties p-type doping
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Conference Paper File Description: text Language: English Author Affiliations: Institute of Technical Physics, University of Erlangen, Erwin-Rommel-Str. 1, 91058 Erlangen, Germany ; Department of Chemistry, Colorado State University, Fort Collins, United States Rights: Copyright 2005 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics of condensed state: electronic structure, electrical, magnetic and optical properties ; Physics of condensed state: structure, mechanical and thermal properties

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