A CMOS dual-mode RF front-end receiver for GSM and WCDMA applications : Analog circuit and device technologies
In: IEICE transactions on electronics, Jg. 88 (2005), Heft 6, S. 1218-1224
Online
academicJournal
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Zugriff:
A dual-mode, triple-band RF front-end receiver for GSM900, DCS1800 and WCDMA is presented in this paper. This chip uses low-IF and zero-IF receiver architectures for GSM and WCDMA respectively to fulfill the entirely different system requirements of the two standards. It consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end is implemented in a standard 0.25 pm CMOS process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3 dB, 36 dB for the GSM900, 5.9dB, 31 dB for the DCS1800, and 4.3 dB, 29.6 dB for the WCDMA, respectively.
Titel: |
A CMOS dual-mode RF front-end receiver for GSM and WCDMA applications : Analog circuit and device technologies
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Autor/in / Beteiligte Person: | KO, Chun-Lin ; KUO, Ming-Ching ; KUO, Chien-Nan |
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Zeitschrift: | IEICE transactions on electronics, Jg. 88 (2005), Heft 6, S. 1218-1224 |
Veröffentlichung: | Oxford: Oxford University Press, 2005 |
Medientyp: | academicJournal |
Umfang: | print, 16 ref |
ISSN: | 0916-8524 (print) |
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