Dielectric properties and high tunability of (100)- and (110)-oriented (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition
In: Journal of crystal growth, Jg. 285 (2005), Heft 4, S. 613-619
academicJournal
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Zugriff:
(Ba0.50Sr0.50)TiO3 (BST) thin films were deposited on Pt(1 1 1)/Ti/SiO2/Si(1 00) substrates without and with LaNiO3 (LNO) bufferlayer prepared by pulsed laser deposition (PLD). The BST thin films directly grown on Pt/Ti/SiO2/Si substrates without and with LNO bufferlayer exhibited highly (1 0 0) and (1 1 0) orientation, respectively. The dielectric constant of the 800-nm-thick BST films with LNO bufferlayer was 1010 at 1 MHz, which was higher than that of BST film with non-bufferlayer (∼851). Also, the tunabilities of BST thin films with (1 0 0)- and (1 1 0)-orientation were ∼63% and ∼62%, respectively, at the applied field of 262.5 kV/cm. Improved dielectric constant has been attributed to LNO bufferlayer.
Titel: |
Dielectric properties and high tunability of (100)- and (110)-oriented (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition
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Autor/in / Beteiligte Person: | TANG, X. G ; XIONG, H. F ; JIANG, L. L ; CHAN, H. L. W |
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Zeitschrift: | Journal of crystal growth, Jg. 285 (2005), Heft 4, S. 613-619 |
Veröffentlichung: | Amsterdam: Elsevier, 2005 |
Medientyp: | academicJournal |
Umfang: | print, 20 ref |
ISSN: | 0022-0248 (print) |
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