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In this paper, the mechanism of Hg1-xCdxTe/Si heterojunction grown by HWE (Hot Well Epitaxy) was studied. Opitical characterizations were shown with FTIR, the composition x= 0.39 was deduced by using MIR transmittance, the absorbing peak at 319.4 cm 1 was measured by FIR transmittance, 319.4 cm-1 confirmed the existence of Si-Te bond of at Si/HgCdTe interfacial layer. The I-V characteristics at both room temperature and 77 K of HgCdTe (n-type)/Si (p-type) heterojunction show that the good p-n heterojunction properties was obtained by using HWE. XRD study confirmed the formation of (111) oriented HgCdTe on (211) Si. Morphology of a cross section observed using EPMA indicates the columnar growth of HgCdTe. An analysis of interfcial layer by EPMA indicated presence of three layers composed of Si + Te, Si + Te + Hg and Si + Te + Cd + Hg. Among them, the most important one is the first layer. The problem of lattice mismatch and the difference of thermal expansion coefficient between Si and CdTe or HgTe may be improved by formation of Si-Te stable chemical bond through bybridization orbital bonding between Si and Te. The second and third layers are formed by evaporation-interdiffusion. Formation of the whole interfacial layer provides the appetency for the growth of (111) Hg1-xCdxTe epilayer on (211) Si substrate.

Titel:	Studies on growth mechanism of HgCdTe epilayer on Si grown by HWE
Autor/in / Beteiligte Person:	AIMING, YANG ; LIBIN, TANG ; CHANGSHU, WU ; JIAMING, YANG ; XINGHUI, WU
Link:	Volltext (PDF) View record from PASCAL Archive
Zeitschrift:	Journal of materials science, Jg. 40 (2005), Heft 24, S. 6453-6458
Veröffentlichung:	Heidelberg: Springer, 2005
Medientyp:	academicJournal
Umfang:	print, 9 ref
ISSN:	0022-2461 (print)
Schlagwort:	Chemical industry parachemical industry Industrie chimique et parachimique Metallurgy, welding Métallurgie, soudage Condensed state physics Physique de l'état condensé Polymers, paint and wood industries Polymères, industries des peintures et bois Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure, proprietes mecaniques et thermiques Condensed matter: structure, mechanical and thermal properties Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques) Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Structures de basse dimensionnalité (superréseaux, puits quantiques, multicouches): structure et propriétés non électroniques Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Propriétés optiques des structures de basse dimensionnalité, mésoscopiques, des nanostructures et nanomatériaux Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Multicouches, superréseaux Multilayers, superlattices Composé minéral Inorganic compounds Métal transition composé Transition element compounds Tellurure Tellurides Cadmium Mercure Tellurure Mixte Cadmium Mercury Tellurides Mixed Mixto Cadmium tellurure Cadmium tellurides Caractéristique courant tension IV characteristic Couche mince Thin films Couche épitaxique Epitaxial layers Diffraction RX XRD Etude expérimentale Experimental study Hétérojonction Heterojunctions Jonction p n p n junctions Mercure tellurure Mercury tellurides Microsonde électronique Electron microprobe Microsonda electrónica Mécanisme croissance Growth mechanism Mecanismo crecimiento Méthode paroi chaude Hot wall growth Método pared caliente Propriété optique Optical properties Propriété électrique Electrical properties Semiconducteur II-VI II-VI semiconductors Simulation Solution solide Solid solutions Spectrométrie FTIR Fourier-transformed infrared spectrometry Espectrometría FTIR Structure interface Interface structure Transmission optique Optical transmission Transmisión óptica Cd Hg Te Hg1-xCdxTe Si
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: Experimental Center, School of Chemistry and Materials Engineering, Yunnan University, Kunming, 650091, China ; Kunming Institute of Physics, Kunming, 650223, China ; Technique Center of Yunnan Metallurgy Group Co. Ltd, Kunming, 650031, China ; Department of Materials Science, School of Chemistry and Materials Engineering, Yunnan University, Kunming, 650091, China Rights: Copyright 2006 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics of condensed state: electronic structure, electrical, magnetic and optical properties ; Physics of condensed state: structure, mechanical and thermal properties

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Studies on growth mechanism of HgCdTe epilayer on Si grown by HWE